Subthreshold Quantum Ballistic Current and QuantumThreshold Voltage Modeling for Nanoscale FinFET

An analytical modeling framework for quantum ballistic charge transport in the subthreshold regime, and a quantum threshold voltage model for nanoscale double-gate (DG) FinFET are presented. For subthreshold conditions, we assume that the electrostatics of the lightly doped silicon body is dominated by the inter-electrode capacitive coupling between the body electrodes. Hence, the charge is neglected in Poisson’s equation. This decouples the selfconsistency between the charge transport, the quantum effects and the body electrostatics. The threshold condition is obtained by self-consistently adjusting the quantum charge potential.